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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3482
DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *High Reliability *Built-in Damper Diode
APPLICATIONS *Designed for high definition CRT display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
scs .i w
VALUE UNIT 1500 V 800 V 7 V 6 A 16 A 120 W
.cn mi e
IC
Collector Current- Continuous
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3482
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; RBE=
800
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
1500
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VECF
C-E Diode Forward Voltage
fT
Current-Gain--Bandwidth Product
w w
scs .i w
IF= 6A
VEB= 4V; IC= 0
IC= 1A; VCE= 5V
.cn mi e
40 8 3
10
A
130
mA
2.0
V
IC= 1A; VCE= 10V
MHz
tstg
Storage Time IC= 5A, IB1= 1A; IB2= -2A; RL= 40; VCC= 200V
3.0
s
tf
Fall Time
0.3
s
isc Websitewww.iscsemi.cn
2


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