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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3482 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *High Reliability *Built-in Damper Diode APPLICATIONS *Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 800 V 7 V 6 A 16 A 120 W .cn mi e IC Collector Current- Continuous ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3482 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain VECF C-E Diode Forward Voltage fT Current-Gain--Bandwidth Product w w scs .i w IF= 6A VEB= 4V; IC= 0 IC= 1A; VCE= 5V .cn mi e 40 8 3 10 A 130 mA 2.0 V IC= 1A; VCE= 10V MHz tstg Storage Time IC= 5A, IB1= 1A; IB2= -2A; RL= 40; VCC= 200V 3.0 s tf Fall Time 0.3 s isc Websitewww.iscsemi.cn 2 |
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